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Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy

Nataraj, L., Sustersic, N., Coppinger, M., Gerlein, L. F., Kolodzey, J. et Cloutier, S. G.. 2010. « Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy ». Applied Physics Letters, vol. 96, nº 12.
Compte des citations dans Scopus : 14.

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Item Type: Peer reviewed article published in a journal
Professor:
Professor
Cloutier, Sylvain G.
Affiliation: Autres
Date Deposited: 27 Jan 2017 16:44
Last Modified: 27 Jan 2017 16:44
URI: https://espace2.etsmtl.ca/id/eprint/14451

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