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Shallow V-shape nanostructured pit arrays in germanium using aqua regia electroless chemical etching

Chaabane, Ibtihel et Banerjee, Debika et Touayar, Oualid et Cloutier, Sylvain G.. 2017. « Shallow V-shape nanostructured pit arrays in germanium using aqua regia electroless chemical etching ». Materials, vol. 10, nº 8.

Cloutier S 2017 15726 Shallow V-shape nanostructured pit arrays.pdf - Version publiée
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Due to its high refractive index, reflectance is often a problem when using Germanium for optoelectronic devices integration. In this work, we propose an effective and low-cost nano-texturing method for considerably reducing the reflectance of bulk Germanium. To do so, uniform V-shape pit arrays are produced by wet electroless chemical etching in a 3:1 volume ratio of highly-concentrated hydrochloridric and nitric acids or so-called aqua regia bath using immersion times ranging from 5 to 60 min. The resulting pit morphology, the crystalline structure of the surface and the changes in surface chemistry after nano-patterning are all investigated. Finally, broadband near-infrared reflectance measurements confirm a significant reduction using this simple wet etching protocol, while maintaining a crystalline, dioxide-free, and hydrogen-passivated surface. It is important to mention that reflectance could be further reduced using deeper pits. However, most optoelectronic applications such as photodetectors and solar cells require relatively shallow patterning of the Germanium to allow formation of a pn-junction close to the surface.

Type de document: Article publié dans une revue, révisé par les pairs
Informations complémentaires: Identifiant de l'article: 854
Cloutier, Sylvain G.
Affiliation: Génie électrique
Date de dépôt: 30 août 2017 20:19
Dernière modification: 04 déc. 2017 18:12

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