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Switching power MOSFET performance: a compromise between EMI generation and thermal consideration

Blanchette, Handy et Al Haddad, Kamal. 2006. « Switching power MOSFET performance: a compromise between EMI generation and thermal consideration ». In IEEE International Symposium on Industrial Electronics (ISIE) (Montreal, Canada, Jul. 9-13, 2006), pp. 1293-1298. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers.
Compte des citations dans Scopus : 4.

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Item Type: Conference proceeding
Professor:
Professor
Al Haddad, Kamal
Affiliation: Génie électrique
Date Deposited: 30 Oct 2012 18:17
Last Modified: 01 Oct 2015 20:01
URI: http://espace2.etsmtl.ca/id/eprint/2670

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