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Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects

Birafane, A., Aflaki, P., Kouki, A. B. et Ghannouchi, F. M.. 2012. « Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects ». Solid-State Electronics, vol. 76. pp. 77-83.
Compte des citations dans Scopus : 7.

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Item Type: Peer reviewed article published in a journal
Professor:
Professor
Kouki, Ammar B.
Affiliation: Génie électrique
Date Deposited: 19 Feb 2013 16:25
Last Modified: 19 Feb 2013 16:25
URI: http://espace2.etsmtl.ca/id/eprint/3383

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