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Two novel modeling methodologies for IGBT transistor

Charfi, F., Messaoud, M. Ben, François, B., Al-Haddad, Kamal et Sellami, F.. 2002. « Two novel modeling methodologies for IGBT transistor ». In 28th Annual Conference of the IEEE Industrial Electronics Society (Sevilla, Spain, Nov. 5-8, 2002), pp. 550-554. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers.
Compte des citations dans Scopus : 8.

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Item Type: Conference proceeding
Professor:
Professor
Al Haddad, Kamal
Affiliation: Génie électrique
Date Deposited: 18 Apr 2013 19:03
Last Modified: 18 Apr 2013 19:03
URI: http://espace2.etsmtl.ca/id/eprint/4517

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