Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design

Jarndal, Anwar, Aflaki, Pouya, Degachi, Louay, Birafane, Ahmed, Kouki, Ammar B., Negra, Renato et Ghannouchi, Fadhel M.. 2010. « Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design ». Solid-State Electronics, vol. 54, nº 7. pp. 696-700.
Compte des citations dans Scopus : 20.

The full text of this document is not available here.

Rechercher dans Google Scholar

Item Type:

Peer reviewed article published in a journal

Professor:

Professor
Kouki, Ammar B.

Affiliation:

Génie électrique

Date Deposited:

23 May 2012 17:56

Last Modified:

23 May 2012 17:56

URI:

http://espace2.etsmtl.ca/id/eprint/467

Actions (login required)

View Item