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Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well

Ban, K. Y., Dahal, S. N., Honsberg, C. B., Nataraj, L., Bremner, S. P. et Cloutier, S. G.. 2010. « Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well ». Journal of Vacuum Science and Technology B : Nanotechnology and Microelectronics, vol. 28. C3I6-C3I9.
Compte des citations dans Scopus : 4.

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Item Type: Peer reviewed article published in a journal
Professor:
Professor
Cloutier, Sylvain G.
Affiliation: Autres
Date Deposited: 27 Jan 2017 16:53
Last Modified: 27 Jan 2017 16:53
URI: https://espace2.etsmtl.ca/id/eprint/14438

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