Essaadali, Riadh, Jarndal, Anwar, Kouki, Ammar et Ghannouchi, Fadhel M..
2016.
« A new GaN HEMT equivalent circuit modeling technique based on x-parameters ».
IEEE Transactions on Microwave Theory and Techniques, vol. 64, nº 9.
pp. 2758-2777.
Compte des citations dans Scopus : 10.
Rechercher dans Google Scholar
Official URL: http://dx.doi.org/10.1109/TMTT.2016.2594234
Item Type: | Peer reviewed article published in a journal | ||
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Affiliation: | Génie électrique | ||
Date Deposited: | 05 Oct 2016 18:04 | ||
Last Modified: | 05 Oct 2016 18:04 | ||
URI: | https://espace2.etsmtl.ca/id/eprint/13794 |
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