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Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography

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Moulins, Anthony, Dugnani, Roberto et Zednik, Ricardo J.. 2021. « Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography ». Engineering Failure Analysis, vol. 123.

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Abstract

Gallium arsenide (GaAs) is used in the most demanding semiconductor applications, including in the medical, aerospace and communication industries, where significant mechanical stresses are experienced during operation. Mechanical stresses from thermal expansion and mechanical loading can result in the fracture of GaAs crystals, a leading cause of semiconductor device failure. Unfortunately, the underlying fracture mechanisms in GaAs III-V semiconductors are currently not well understood. In this manuscript, we present a quantitative approach to identify the main GaAs fractographic features and correlate these to a crystal’s original mechanical fracture strength. In addition, detailed fractographic analysis was used to estimate the crystal hackle constant (analogous to the mirror constant in isotropic media), = 1.58 MPa√m on the {1 1 0} cleavage planes of GaAs. Finally, crystal stereography and analytical geometry was used to confirm that the fractographic features correspond to the intrinsic symmetries of single-crystal GaAs.

Item Type: Peer reviewed article published in a journal
Additional Information: Identifiant de l'article: 105313
Professor:
Professor
Zednik, Ricardo
Affiliation: Génie mécanique
Date Deposited: 05 Mar 2021 19:10
Last Modified: 12 Mar 2021 18:48
URI: https://espace2.etsmtl.ca/id/eprint/22347

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