Villeneuve, Guillaume, Wuthrich, Rolf et Hof, L.ucas A..
2026.
« Mechanical–thermochemical removal mechanisms in high‑aspect‑ratio hole fabrication by Mechanical-Spark Assisted Chemical Engraving (M−SACE) in silicon nitride ».
Materials and Design, vol. 269.
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Résumé
Silicon nitride (Si3N4) is highly relevant in industry, yet its hardness and chemical resistance severely limit the machining of sub-millimeter, high-aspect-ratio features. This study introduces Mechanical-Spark Assisted Chemical Engraving (M−SACE), a hybrid process combining thermochemical degradation with mechanical drilling to micromachine Si3N4. Operating in a 20 wt% NaOH solution, a tool-electrode applies electrochemical discharges while simultaneously machining the substrate. In the tested operating conditions, the material removal mechanism is identified as heating from the discharges causing NaOH to preferentially attack silicon oxynitride-based grain boundaries, weakening the ceramic and allowing mechanical removal with minimal force. Voltage and feed rate were varied for machining 100 µm deep holes, demonstrating that this synergy yields higher material removal rates, lower machining forces, and reduced surface roughness (100–200 nm Sa) compared to isolated thermochemical or mechanical effects. Process capability and stability are validated by producing 500 µm depth holes. A deep hole (400 µm diameter, 1329 µm depth) is machined as a proof-of-concept for high-aspect ratio features, demonstrating the potential of M−SACE as a low-cost solution for ceramic micromachining. This work will serve as a basis for further research on precision hybrid thermochemical machining of hard and brittle ceramics.
| Type de document: | Article publié dans une revue, révisé par les pairs |
|---|---|
| Chercheur(-euse): | Chercheur(-euse) Hof, Lucas |
| Affiliation: | Génie mécanique |
| Date de dépôt: | 11 août 2026 20:16 |
| Dernière modification: | 26 sept. 2026 18:30 |
| URI: | https://espace2.etsmtl.ca/id/eprint/34200 |
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