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High-field response of gated graphene at terahertz frequencies

Razavipour, Hadi et Yang, Wayne et Guermoune, Abdeladim et Hilke, Michael et Cooke, David G. et Al-Naib, Ibraheem et Dignam, Marc M. et Blanchard, François et Hafez, Hassan A. et Chai, Xin et Ferachou, Denis et Ozaki, Tsuneyuki et Lévesque, Pierre L. et Martel, Richard. 2015. « High-field response of gated graphene at terahertz frequencies ». Physical Review B, vol. 92, nº 24.

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Blanchard F. 2015 12031 Pre-print High-field response of gated graphene at terahertz frequencies.pdf - Version soumise

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Résumé

We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This e↵ect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite di↵erent, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.

Type de document: Article publié dans une revue, révisé par les pairs
Informations complémentaires: Identifiant de l'article: 245421
Professeur:
Professeur
Blanchard, François
Affiliation: Génie électrique
Date de dépôt: 18 déc. 2015 14:56
Dernière modification: 20 janv. 2016 14:49
URI: http://espace2.etsmtl.ca/id/eprint/12031

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