Razavipour, Hadi, Yang, Wayne, Guermoune, Abdeladim, Hilke, Michael, Cooke, David G., Al-Naib, Ibraheem, Dignam, Marc M., Blanchard, François, Hafez, Hassan A., Chai, Xin, Ferachou, Denis, Ozaki, Tsuneyuki, Lévesque, Pierre L. et Martel, Richard.
2015.
« High-field response of gated graphene at terahertz frequencies ».
Physical Review B, vol. 92, nº 24.
Compte des citations dans Scopus : 20.
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Blanchard F. 2015 12031 Pre-print High-field response of gated graphene at terahertz frequencies.pdf - Version soumise Télécharger (3MB) | Prévisualisation |
Résumé
We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This e↵ect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite di↵erent, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.
| Type de document: | Article publié dans une revue, révisé par les pairs |
|---|---|
| Informations complémentaires: | Identifiant de l'article: 245421 |
| Professeur: | Professeur Blanchard, François |
| Affiliation: | Génie électrique |
| Date de dépôt: | 18 déc. 2015 14:56 |
| Dernière modification: | 20 janv. 2016 14:49 |
| URI: | https://espace2.etsmtl.ca/id/eprint/12031 |
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