Essaadali, R., Kouki, Ammar B., Jarndal, A. et Ghannouchi, F. M..
2015.
« Modeling of extrinsic parasitic elements of Si based GaN HEMTs using two step de-embedding structures ».
In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON) (Cocoa Beach, FL, USA, Apr. 13-15, 2015)
Piscataway, NJ, USA : IEEE.
Compte des citations dans Scopus : 1.
Rechercher dans Google Scholar
Official URL: http://dx.doi.org/10.1109/WAMICON.2015.7120399
Item Type: | Conference proceeding | ||
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ISBN: | 978-1-4799-7521-1 | ||
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Affiliation: | Génie électrique | ||
Date Deposited: | 21 Jul 2015 21:21 | ||
Last Modified: | 21 Jul 2015 21:21 | ||
URI: | https://espace2.etsmtl.ca/id/eprint/10011 |
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