Modeling of extrinsic parasitic elements of Si based GaN HEMTs using two step de-embedding structures

Essaadali, R., Kouki, Ammar B., Jarndal, A. et Ghannouchi, F. M.. 2015. « Modeling of extrinsic parasitic elements of Si based GaN HEMTs using two step de-embedding structures ». In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON) (Cocoa Beach, FL, USA, Apr. 13-15, 2015) Piscataway, NJ, USA : IEEE.
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Item Type:	Conference proceeding
ISBN:	978-1-4799-7521-1
Professor:	Professor Kouki, Ammar B.
Affiliation:	Génie électrique
Date Deposited:	21 Jul 2015 21:21
Last Modified:	21 Jul 2015 21:21
URI:	https://espace2.etsmtl.ca/id/eprint/10011

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