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A general and reliable model for GaN HEMTs on Si and SiC substrates

Jarndal, A., Essaadali, R. et Kouki, Ammar B.. 2015. « A general and reliable model for GaN HEMTs on Si and SiC substrates ». In 2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON) (Cocoa Beach, FL, USA, Apr. 13-15, 2015) Piscataway, NJ, USA : IEEE.
Compte des citations dans Scopus : 3.

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Item Type: Conference proceeding
ISBN: 978-1-4799-7521-1
Professor:
Professor
Kouki, Ammar B.
Affiliation: Génie électrique
Date Deposited: 21 Jul 2015 21:21
Last Modified: 21 Jul 2015 21:21
URI: https://espace2.etsmtl.ca/id/eprint/10012

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