GaAs FET's gate current behavior and its effects on RF performance and reliability in SSPA's

Constantin, Nicolas and Ghannouchi, Fadhel M.. 1995. « GaAs FET's gate current behavior and its effects on RF performance and reliability in SSPA's ». IEEE Transactions on Microwave Theory and Techniques, vol. 43, nº 12. pp. 2918-2925.
Compte des citations dans Scopus : 4.

The full text of this document is not available here.

Item Type:	Peer reviewed article published in a journal
Professor:	Professor Constantin, Nicolas
Affiliation:	Génie électrique
Date Deposited:	06 Nov 2015 15:52
Last Modified:	06 Nov 2015 15:52
URI:	https://espace2.etsmtl.ca/id/eprint/11785

Actions (login required)

View Item