Constantin, Nicolas et Ghannouchi, Fadhel M..
1995.
« Comprehensive experimental investigation of gate current limitation effects on power GaAs FETs RF performances ».
In IEEE MTT-S International Microwave Symposium Digest, 1995 (Orlando, FL, USA, May 16-20, 1995)
pp. 717-720.
Compte des citations dans Scopus : 1.
Rechercher dans Google Scholar
Official URL: http://dx.doi.org/10.1109/MWSYM.1995.406007
Item Type: | Conference proceeding | ||
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ISBN: | 0149-645X | ||
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Affiliation: | Génie électrique | ||
Date Deposited: | 06 Nov 2015 16:19 | ||
Last Modified: | 06 Nov 2015 16:19 | ||
URI: | https://espace2.etsmtl.ca/id/eprint/11792 |
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