Comprehensive experimental investigation of gate current limitation effects on power GaAs FETs RF performances

Constantin, Nicolas et Ghannouchi, Fadhel M.. 1995. « Comprehensive experimental investigation of gate current limitation effects on power GaAs FETs RF performances ». In IEEE MTT-S International Microwave Symposium Digest, 1995 (Orlando, FL, USA, May 16-20, 1995) pp. 717-720.
Compte des citations dans Scopus : 1.

The full text of this document is not available here.

Item Type:	Conference proceeding
ISBN:	0149-645X
Professor:	Professor Constantin, Nicolas
Affiliation:	Génie électrique
Date Deposited:	06 Nov 2015 16:19
Last Modified:	06 Nov 2015 16:19
URI:	https://espace2.etsmtl.ca/id/eprint/11792

Actions (login required)

View Item