Saffari, Parvaneh, Taherzadeh-Sani, Mohammad, Basaligheh, Ali, Nabki, Frederic et Sawan, Mohamad.
2015.
« Low-energy CMOS common-drain power amplifier for short-range applications ».
In 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS) (Grenoble, France, June 7-10, 2015)
Piscataway, NJ, USA : IEEE.
Compte des citations dans Scopus : 3.
Prévisualisation |
PDF
Nabki F. 2015 13242 Low-energy CMOS common-drain.pdf - Version acceptée Licence d'utilisation : Tous les droits réservés aux détenteurs du droit d'auteur. Télécharger (624kB) | Prévisualisation |
Résumé
In this paper, a power amplifier implemented with a common-drain structure is introduced. With proper input matching, this structure is shown to provide a reasonable power gain and superior linearity and efficiency in comparison to other low-power topologies. This is shown to be due to the low dependency of the power gain to the transistor transconductance and the low-voltage variations across the gate-source capacitance. This power amplifier is suitable for low-power and short-range applications such as Bluetooth Low Energy (BLE). Based on the calculated S-parameters, the operation frequency of this amplifier and its design trade-offs are presented, along with a comparison with competitive topologies. The design is simulated in a 0.13 μm CMOS technology, operates with a 1.2 V supply, and provides a power gain of 8.5 dB with a DC power consumption of 3.6 mW. The input 1-dB compression point is 2.2 dBm, yielding a power added efficiency of 43%.
| Type de document: | Compte rendu de conférence |
|---|---|
| Professeur: | Professeur Nabki, Frédéric |
| Affiliation: | Autres |
| Date de dépôt: | 13 juill. 2016 18:01 |
| Dernière modification: | 06 déc. 2016 20:48 |
| URI: | https://espace2.etsmtl.ca/id/eprint/13242 |
Actions (Authentification requise)
 |
Dernière vérification avant le dépôt |