Low-energy CMOS common-drain power amplifier for short-range applications

Saffari, Parvaneh, Taherzadeh-Sani, Mohammad, Basaligheh, Ali, Nabki, Frederic et Sawan, Mohamad. 2015. « Low-energy CMOS common-drain power amplifier for short-range applications ». In 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS) (Grenoble, France, June 7-10, 2015) Piscataway, NJ, USA : IEEE.
Compte des citations dans Scopus : 3.

Prévisualisation

PDF Nabki F. 2015 13242 Low-energy CMOS common-drain.pdf - Version acceptée Licence d'utilisation : Tous les droits réservés aux détenteurs du droit d'auteur. Télécharger (624kB) | Prévisualisation

Résumé

In this paper, a power amplifier implemented with a common-drain structure is introduced. With proper input matching, this structure is shown to provide a reasonable power gain and superior linearity and efficiency in comparison to other low-power topologies. This is shown to be due to the low dependency of the power gain to the transistor transconductance and the low-voltage variations across the gate-source capacitance. This power amplifier is suitable for low-power and short-range applications such as Bluetooth Low Energy (BLE). Based on the calculated S-parameters, the operation frequency of this amplifier and its design trade-offs are presented, along with a comparison with competitive topologies. The design is simulated in a 0.13 μm CMOS technology, operates with a 1.2 V supply, and provides a power gain of 8.5 dB with a DC power consumption of 3.6 mW. The input 1-dB compression point is 2.2 dBm, yielding a power added efficiency of 43%.

Type de document:	Compte rendu de conférence
Professeur:	Professeur Nabki, Frédéric
Affiliation:	Autres
Date de dépôt:	13 juill. 2016 18:01
Dernière modification:	06 déc. 2016 20:48
URI:	https://espace2.etsmtl.ca/id/eprint/13242

Actions (Authentification requise)

Dernière vérification avant le dépôt