GaN high electron mobility transistors: a review from parasitic elements extraction's perspective

Jarndal, Anwar and Kouki, Ammar. 2016. « GaN high electron mobility transistors: a review from parasitic elements extraction's perspective ». The Journal of Engineering.

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Item Type:	Peer reviewed article published in a journal
Professor:	Professor Kouki, Ammar B.
Affiliation:	Génie électrique
Date Deposited:	25 Jul 2016 20:15
Last Modified:	26 Oct 2016 17:40
URI:	https://espace2.etsmtl.ca/id/eprint/13364

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