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GaN high electron mobility transistors: a review from parasitic elements extraction's perspective

Jarndal, Anwar et Kouki, Ammar. 2016. « GaN high electron mobility transistors: a review from parasitic elements extraction's perspective ». The Journal of Engineering.

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Item Type: Peer reviewed article published in a journal
Professor:
Professor
Kouki, Ammar B.
Affiliation: Génie électrique
Date Deposited: 25 Jul 2016 20:15
Last Modified: 26 Oct 2016 17:40
URI: https://espace2.etsmtl.ca/id/eprint/13364

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