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Circuit level modeling of extra combinational delays in SRAM FPGAs due to transient ionizing radiation

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Darvishi, M., Audet, Y., Blaquière, Y. et Thibeault, C.. 2014. « Circuit level modeling of extra combinational delays in SRAM FPGAs due to transient ionizing radiation ». Affiche présentée lors de la conférence : IEEE Nuclear and Space Radiation Effects Conference (Paris, France, July 14-18, 2014).

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Abstract

This paper presents a novel circuit level model that explains and confirms the extra combinational delays in a SRAM-FPGA (Virtex-5) due to radiation, which matches the experimental results by proton irradiation at TRIUMF.

Item Type: Poster
Professor:
Professor
Blaquière, Yves
Thibeault, Claude
Affiliation: Autres, Génie électrique
Date Deposited: 21 Feb 2017 16:55
Last Modified: 09 May 2017 18:13
URI: https://espace2.etsmtl.ca/id/eprint/14671

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