FRANÇAIS
A showcase of ÉTS researchers’ publications and other contributions
SEARCH

Circuit level modeling of extra combinational delays in SRAM FPGAs due to transient ionizing radiation

Darvishi, M., Audet, Y., Blaquière, Y. and Thibeault, C.. 2014. « Circuit level modeling of extra combinational delays in SRAM FPGAs due to transient ionizing radiation ». Affiche présentée lors de la conférence : IEEE Nuclear and Space Radiation Effects Conference (Paris, France, July 14-18, 2014).

[thumbnail of Circuit-Level-Modeling-of-Extra-Combinational-Delays-in-SRAM-FPGAs-Due-to-Transient-Ionizing-Radiation.pdf]
Preview
PDF
Circuit-Level-Modeling-of-Extra-Combinational-Delays-in-SRAM-FPGAs-Due-to-Transient-Ionizing-Radiation.pdf

Download (356kB) | Preview

Abstract

This paper presents a novel circuit level model that explains and confirms the extra combinational delays in a SRAM-FPGA (Virtex-5) due to radiation, which matches the experimental results by proton irradiation at TRIUMF.

Item Type: Poster
Professor:
Professor
Blaquière, Yves
Thibeault, Claude
Affiliation: Autres, Génie électrique
Date Deposited: 21 Feb 2017 16:55
Last Modified: 09 May 2017 18:13
URI: https://espace2.etsmtl.ca/id/eprint/14671

Actions (login required)

View Item View Item