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A Sub-mW 18-MHz MEMS oscillator based on a 98-dBΩ adjustable bandwidth transimpedance amplifier and a Lamé-mode resonator

Bouchami, Anoir, Elsayed, Mohannad Y. et Nabki, Frederic. 2019. « A Sub-mW 18-MHz MEMS oscillator based on a 98-dBΩ adjustable bandwidth transimpedance amplifier and a Lamé-mode resonator ». Sensors, vol. 19, nº 12.
Compte des citations dans Scopus : 9.

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Résumé

This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance CP of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz−−−√ . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm.

Type de document: Article publié dans une revue, révisé par les pairs
Professeur:
Professeur
Nabki, Frédéric
Affiliation: Génie électrique
Date de dépôt: 04 oct. 2019 18:47
Dernière modification: 22 janv. 2020 20:10
URI: https://espace2.etsmtl.ca/id/eprint/19493

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