FRANÇAIS
A showcase of ÉTS researchers’ publications and other contributions
SEARCH

A Sub-mW 18-MHz MEMS oscillator based on a 98-dBΩ adjustable bandwidth transimpedance amplifier and a Lamé-mode resonator

Downloads

Downloads per month over past year

Bouchami, Anoir, Elsayed, Mohannad Y. et Nabki, Frederic. 2019. « A Sub-mW 18-MHz MEMS oscillator based on a 98-dBΩ adjustable bandwidth transimpedance amplifier and a Lamé-mode resonator ». Sensors, vol. 19, nº 12.

[img]
Preview
PDF
Nabki F 2019 19493.pdf - Published Version
Use licence: Creative Commons CC BY.

Download (3MB) | Preview

Abstract

This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance CP of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz−−−√ . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm.

Item Type: Peer reviewed article published in a journal
Professor:
Professor
Nabki, Frédéric
Affiliation: Génie électrique
Date Deposited: 04 Oct 2019 18:47
Last Modified: 22 Jan 2020 20:10
URI: https://espace2.etsmtl.ca/id/eprint/19493

Actions (login required)

View Item View Item