Switching power MOSFET performance: a compromise between EMI generation and thermal consideration

Blanchette, Handy and Al Haddad, Kamal. 2006. « Switching power MOSFET performance: a compromise between EMI generation and thermal consideration ». In IEEE International Symposium on Industrial Electronics (ISIE) (Montreal, Canada, Jul. 9-13, 2006) pp. 1293-1298. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers.
Compte des citations dans Scopus : 4.

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Item Type:	Conference proceeding
ISBN:	1-4244-0496-7
Professor:	Professor Fortin Blanchette, Handy Al Haddad, Kamal
Affiliation:	Autres, Génie électrique
Date Deposited:	30 Oct 2012 18:17
Last Modified:	20 Sep 2022 13:58
URI:	https://espace2.etsmtl.ca/id/eprint/2670

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