Shuaibu, Abdurrashid Hassan, Rabih, Almur A. S., Blaquière, Yves et Nabki, Frederic.
2026.
« Post-release metallization in MEMS silicon-to-silicon contact switches for on-resistance improvement ».
Micromachines, vol. 17, nº 3.
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Résumé
This work reports a post-release sputter-metallization process for microelectromechanical systems (MEMS) switches with silicon-to-silicon (Si-to-Si) contacts fabricated by deep reactive ion etching. Platinum (Pt) was selectively deposited on the contacting platforms through a perforated mask. Alternatively, aluminum (Al) was deposited over a thin chromium (Cr) adhesion layer. Electrical measurements showed that Pt enabled a contact resistance on the order of 406 Ω at a 1 mA test current, whereas the resistance of Al/Cr coatings decreased from 7.94 kΩ at 1 mA to 270 Ω at 25 mA, a change that was potentially linked to oxidation of the Al. These results demonstrated successful coating, with uniform top-surface and edge coverage as revealed by energy-dispersive X-ray spectroscopy imaging. Overall, the results indicate that post-release metallization has the potential to improve the operational repeatability of Si-to-Si contact MEMS switches in static and dynamic tests; the findings also point to process refinements to further optimize contact resistance.
| Type de document: | Article publié dans une revue, révisé par les pairs |
|---|---|
| Chercheur(-euse): | Chercheur(-euse) Blaquière, Yves Nabki, Frédéric |
| Affiliation: | Génie électrique, Génie électrique |
| Date de dépôt: | 17 avr. 2026 20:34 |
| Dernière modification: | 22 avr. 2026 20:16 |
| URI: | https://espace2.etsmtl.ca/id/eprint/33622 |
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