Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects

Birafane, A., Aflaki, P., Kouki, A. B. and Ghannouchi, F. M.. 2012. « Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects ». Solid-State Electronics, vol. 76. pp. 77-83.
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Item Type:	Peer reviewed article published in a journal
Professor:	Professor Kouki, Ammar B.
Affiliation:	Génie électrique
Date Deposited:	19 Feb 2013 16:25
Last Modified:	19 Feb 2013 16:25
URI:	https://espace2.etsmtl.ca/id/eprint/3383

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