Two novel modeling methodologies for IGBT transistor

Charfi, F., Messaoud, M. Ben, François, B., Al-Haddad, Kamal et Sellami, F.. 2002. « Two novel modeling methodologies for IGBT transistor ». In 28th Annual Conference of the IEEE Industrial Electronics Society (Sevilla, Spain, Nov. 5-8, 2002) pp. 550-554. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers.
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Item Type:	Conference proceeding
ISBN:	0-7803-7474-6
Professor:	Professor Al Haddad, Kamal
Affiliation:	Génie électrique
Date Deposited:	18 Apr 2013 19:03
Last Modified:	18 Apr 2013 19:03
URI:	https://espace2.etsmtl.ca/id/eprint/4517

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