Charfi, F., Messaoud, M. Ben, François, B., Al-Haddad, Kamal et Sellami, F..
2002.
« Two novel modeling methodologies for IGBT transistor ».
In 28th Annual Conference of the IEEE Industrial Electronics Society (Sevilla, Spain, Nov. 5-8, 2002)
pp. 550-554.
Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers.
Compte des citations dans Scopus : 8.
Rechercher dans Google Scholar
Official URL: http://dx.doi.org/10.1109/IECON.2002.1187567
Item Type: | Conference proceeding | ||
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ISBN: | 0-7803-7474-6 | ||
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Affiliation: | Génie électrique | ||
Date Deposited: | 18 Apr 2013 19:03 | ||
Last Modified: | 18 Apr 2013 19:03 | ||
URI: | https://espace2.etsmtl.ca/id/eprint/4517 |
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