Ziabakhsh, Soheyl, Gagnon, Ghyslain and Roberts, Gordon W..
2018.
« The peak-SNR performances of voltage-mode versus time-mode circuits ».
IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 65, nº 12.
pp. 1869-1873.
Compte des citations dans Scopus : 23.
Preview |
PDF
Gagnon-G-2018-16604.pdf - Accepted Version Use licence: All rights reserved to copyright holder. Download (2MB) | Preview |
Abstract
Representing signals in the time domain, as pulses of variable time duration, is a promising solution for analog signal processing in CMOS technologies with low supply voltages. This brief aims at determining the peak signal-to-noise ratio of a pMOS-nMOS transistor stack used in both voltage-mode and time-mode circuits. A detailed noise analysis which includes both thermal and flicker noise contributions is performed in both domains. The analysis is applied to different CMOS technology nodes and compared to Spectre transient noise analysis tools. A silicon prototype was fabricated in the IBM 130-nm CMOS technology. Measurements confirm the accuracy of the proposed analysis.
Item Type: | Peer reviewed article published in a journal |
---|---|
Professor: | Professor Gagnon, Ghyslain |
Affiliation: | Génie électrique |
Date Deposited: | 17 Apr 2018 13:48 |
Last Modified: | 24 Nov 2022 15:57 |
URI: | https://espace2.etsmtl.ca/id/eprint/16604 |
Actions (login required)
View Item |